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| 2SB1275 / 2SB1236A Transistors Power Transistor (-160V , -1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = -160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. External dimensions (Unit : mm) 2SB1275 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 2.3 0.8Min. 5.1 6.5 C0.5 Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector 2SB1275 power dissipation 2SB1236A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits -160 -160 -5 -1.5 -3 1 PC Tj Tstg 10 1 150 -55+150 Unit V V V A(DC) A(Pulse) W(Tc=25C) W C C ROHM : CPT3 EIAJ : SC-63 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 2SB1236A 1 0.65Max. 6.8 2.5 0.9 1.0 4.4 2 (1) (2) (3) 2.54 2.54 0.5 1.05 14.5 0.45 1 Single pulse Pw=100ms 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1275 CPT3 P TL 2500 2SB1236A ATV PQ TV2 2500 Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1275 2SB1236A Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. Typ. Max. Unit V V V A A V IC = -50A IC = -1mA IE = -50A VCB = -120V VEB = -4V IC/IB = -1A/-0.1A VCE = -5V , IC = -0.1A VCE = -5V , IE = 0.1A , f = 30MHz VCB = -10V , IE =0A , f = 1MHz Conditions -160 -160 -5 - - - 82 82 - - - - - - - - 50 30 - - - -1 -1 -2 180 270 - - MHz pF Transition frequency Output capacitance Measured using pulse current. - - - - Rev.A 1/3 2SB1275 / 2SB1236A Transistors Electrical characteristics curves -1.0 COLLECTOR CURRENT : IC (A) Ta=25C COLLECTOR CURRENT : IC (A) -10 -5 VCE= -5V 1000 500 DC CURRENT GAIN : hFE Ta=25C -0.8 -10mA -9mA -8mA -7mA PC=1W -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 BASE TO EMITTER VOLTAGE : VBE (V) 200 100 50 20 10 5 2 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 VCE= -10V -0.6 -0.2 IB= 0mA -3mA -2mA -1mA 0 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 25C -25C -4mA Ta=100 C -0.4 -5mA -6mA -5V COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 500 DC CURRENT GAIN : hFE VCE= -10V -10 -5 -2 -1 -0.5 Ta=25C -10 -5 -2 -1 Ta= -25C -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 IC/IB=10 200 100 50 20 10 5 2 Ta=100C 25C 25C VBE(sat) -25C IC/IB=50 -0.2 -0.1 -0.05 -0.02 -0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 100C Ta=100C VCE(sat) -25C 20 10 25C 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage COLLECTOR OUTPUT CAPACITANCE: Cob (pF) 1000 TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 VCE= -5V Ta=25C 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 COLLECTOR CURRENT : IC (A) f=1MHz IE=0A Ta=25C -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 Ic Max. (Pulse) Pw=10ms 100ms DC 100 200 500 1000 -10 -20 -50 -100 -0.005 Ta=25C Single NONREPETITIVE -0.002 PULSE -0.001 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Resistance raito vs. emmiter current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Safe operating area (2SB1236A) Rev.A 2/3 2SB1275 / 2SB1236A Transistors -10 -5 COLLECTOR CURRENT : IC (A) Ic Max. (Pulse) -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 Ta=25C Single NONREPETITIVE -0.002 PULSE -0.001 -0.1 -0.2 -0.5 -1 -2 -5 -10 DC Pw=10ms 100ms -20 -50 -100 -200 -500 -1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SB1275) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
Price & Availability of 2SB1275
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